| Autor: |
Afonenko, Alexander, Ushakov, Dmitrii, Alymov, Georgy, Dubinov, Aleksandr, Morozov, Sergey, Gavrilenko, Vladimir, Svintsov, Dmitry |
| Předmět: |
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| Zdroj: |
Journal of Physics D: Applied Physics; 4/29/2021, Vol. 54 Issue 17, p1-9, 9p |
| Abstrakt: |
Operation of semiconductor lasers in the 20–50 µm wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at λ = 26, ..., 30 µm at temperatures up to 90 K. The output power in the pulse can reach up to 8 mW for microsecond-duration pulses. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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