High Luminescence Efficiency from GaAsN Layers Grown by MBE with RF Nitrogen Plasma Source.

Autor: Ustinov, Victor M., Cherkashin, Nikolai A., Bert, Nikolai A., Tsatsul'nikov, Andrei F., Kovsh, Alexei R., Wang, Jyh-Shang, Wei, Li, Chi, Jim Y.
Zdroj: MRS Online Proceedings Library; 2001, Vol. 692 Issue 1, p1-6, 6p
Databáze: Complementary Index