Preparation of Large, Location-Controlled SI Grains by Excimer Laser Crystallization of α-SI FILM SPUTTERED AT 100°C.

Autor: He, Ming, Neihof, E. J. J., Van Andel, Y., Schellevis, H., Ishihara, R., Metselaar, J. W., Beenakker, C. I. M.
Zdroj: MRS Online Proceedings Library; 2006, Vol. 910 Issue 1, p1-6, 6p
Databáze: Complementary Index