Influence of Arsenic Clustering and Precipitation on the Interstitial and Vacancy Concentration in Silicon.

Autor: Brindos, R., Clark, M. H., Jones, K. S., Griglione, M., Gossmann, Hans-J., Agarwal, A., Murto, B., Andideh, E.
Zdroj: MRS Online Proceedings Library; 2001, Vol. 669 Issue 1, p1-6, 6p
Databáze: Complementary Index
Externí odkaz: