Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire.

Autor:	Hansen, Monica, Fini, Paul, Zhao, Lijie, Abare, Amber, Coldren, Larry A., Speck, James S., DenBaars, Steven P.
Zdroj:	MRS Online Proceedings Library; 1999, Vol. 595 Issue 1, p1-6, 6p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink