Structural and Optical Properties of Porous III-V Semiconductors GaAs, InP Prepared by Electrochemical Etching.

Autor: Dmitruk, Nicholas L., Berezovska, Natalia I., Dmitruk, Igor M., Naumenko, Denis O., Simkiene, Irene, Snitka, Valentinas
Zdroj: MRS Online Proceedings Library; 2012, Vol. 1534 Issue 1, p99-104, 6p
Databáze: Complementary Index