Comparison of Doping of Gey Si1-y:H (y>0.95) Films Deposited by Low Frequency PECVD at High (300°C) and Low (160°C) Temperatures.

Autor: Cosme, Ismael, Kosarev, Andrey, Avila, Francisco Temoltzi, Itzmoyotl, Adrian
Zdroj: MRS Online Proceedings Library; 2012, Vol. 1426 Issue 1, p295-299, 5p
Databáze: Complementary Index
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