| Autor: |
Komarov, F. F., Milchanin, O. V., Parkhomenko, I. N., Vlasukova, L. A., Nechaev, N. S., Skuratov, V. A., Yuvchenko, V. N. |
| Předmět: |
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| Zdroj: |
Journal of Engineering Physics & Thermophysics; 2019, Vol. 92 Issue 2, p508-515, 8p |
| Abstrakt: |
The authors have given results of investigations into the structural and optical properties of InAs nanoclusters formed by the ion-implantation method in silicon and silica matrices. The influence of the heat treatment at a temperature of 900°C and of the irradiation with Xe ions with an energy of 167 MeV and a fluence of 3·1014 cm–2 on the structure and photoluminescence of the formed systems has been found. In the case of the system ″InAs in SiO2″ the irradiation with Xe ions leads to an enhancement of the intensity and a broadening of the luminescence spectrum in the visible spectral region (550–750 nm). The ordering of the nanoclusters and their stretching along the path of the Xe ions in the SiO2 matrix has been found. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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