| Autor: |
Temel, Oguzhan, Kalay, Yunus Eren, Akin, Tayfun |
| Předmět: |
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| Zdroj: |
Journal of Microelectromechanical Systems; Feb2021, Vol. 30 Issue 1, p64-71, 8p |
| Abstrakt: |
A novel solid-liquid inter-diffusion (SLID) bonding process is developed allowing to use thin layers of the Au-Sn material in wafer-level microelectromechanical systems (MEMS) packaging while providing a good bonding strength. The bond material layers are designed to have a robust bond material configuration and a metallic bond with a high re-melting temperature, which is an important advantage of SLID bonding or with its alternative name, transient liquid phase (TLP) bonding. The liquid phase in SLID bonding is the gold-rich eutectic liquid of the Au-Sn material system, where the bonding temperature is selected to be 320 °C for a reliable bonding. The average shear strength of the bonds is measured to be 38± 1.8 MPa. The hermeticity of the package is tested with the He-Leak test according to MIL-STD 883, which yields a leak value lower than $0.1 \times 10^{-9}\,\, atm.cm^{\textit {3}}/s$. The vacuum inside the package without a getter is calculated as 2.5 mbar after cap wafer thinning. The vacuum level is well preserved after post-processes such as annealing at 400 °C and the dicing process. These results verify that thin layers of Au-Sn materials can be used reliably with the SLID or TLP bonding technique using the new approach proposed in this study. [2020-0353] [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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