Time-Dependent Bias Stress-Induced Instability of SiC MOS Devices.

Autor: Lelis, Aivars, Habersat, Daniel, Olaniran, Fatimat, Simons, Brian, McGarrity, James, McLean, F. Barry, Goldsman, Neil
Zdroj: MRS Online Proceedings Library; 2006, Vol. 911 Issue 1, p1-6, 6p
Databáze: Complementary Index