950V, 8.7mohm-cm2 High Speed 4H-SiC Power DMOSFETs.

Autor: Ryu, Sei-Hyung, Jonas, Charlotte, Heath, Bradley, Richmond, James, Agarwal, Anant, Palmour, John
Zdroj: MRS Online Proceedings Library; 2006, Vol. 911 Issue 1, p1-10, 10p
Databáze: Complementary Index
Externí odkaz: