Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing.

Autor:	Nipoti, Roberta, Carnera, Alberto, Bergamini, Fabio, Canino, Mariaconcetta, Poggi, Antonella, Solmi, Sandro, Passini, Mara
Zdroj:	MRS Online Proceedings Library; 2006, Vol. 911 Issue 1, p1-6, 6p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink