Homoepitaxial growth on 4H-SiC Substrates by Chemical Vapor Deposition.

Autor:	Hallin, Christer, Khlebnikov, Igor, Khlebnikov, Yuri, Muzykov, Peter, Berkman, Elif, Sharma, Monica, Stratiy, George, Silan, Murat, Basceri, Cem, Balkas, Cengiz
Zdroj:	MRS Online Proceedings Library; 2006, Vol. 911 Issue 1, p1-6, 6p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink