| Autor: |
Hayati, Mohsen, Daryabari, Farzad, Zarghami, Sepehr |
| Zdroj: |
IET Circuits, Devices & Systems (Wiley-Blackwell); Mar2020, Vol. 14 Issue 2, p200-208, 9p |
| Abstrakt: |
In this paper, a low power ultra‐wideband (UWB) low noise amplifier (LNA) with high and flatvoltage gain is proposed using CS‐CG noise‐cancellation and dual resonancenetwork techniques based on TSMC 180 nm technology. The CS‐CG noise cancellationtechnique reduced the noise figure in 3–10.6 GHz frequency band, and the dualresonance network technique is applied to reach an acceptable input matching. Inorder to reduce the number of inductors, the active inductor is used in thenoise cancellation stage. Also, to control voltage gain and input return loss, aresistor is connected in parallel to channel length modulation resistance of thetransistor in the first stage. The developed LNA circuit provides a high andflat voltage gain of 12.75 dB with 0.65 dB variation, which is the result ofusing two stages common‐source topology. An average noise figure of 2 dB, withits maximum value of 2.3 dB, an IIP3 of −8 dBm are obtained from 3 to 10.6 GHz,respectively. The obtained input and output matching value are better than−10 dB. The layout of proposed LNA occupies an area of 0.55 mm2 including ringpad and this structure consumes 11.56 mW from 1‐V dc supply. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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