| Autor: |
Lee, Hee Ae, Park, Jae Hwa, Lee, Joo Hyung, Lee, Seung Hoon, Kang, Hyo Sang, Lee, Seong Kuk, Park, Won Il, Yi, Sung Chul |
| Zdroj: |
Electronic Materials Letters; Jan2021, Vol. 17 Issue 1, p43-53, 11p |
| Abstrakt: |
We investigated the effects of different thermal treatment conditions on the surface and internal residual strains of bulk GaN grown by hydride vapor phase epitaxy (HVPE). Thermal annealing was performed at 700–1000 °C for 1–5 h in nitrogen atmosphere. The GaN was characterized by atomic force microscopy, energy dispersive spectrometry, X-ray photoelectron spectroscopy, Raman spectroscopy, and by high-resolution X-ray diffractometer. The experimental results demonstrated that thermal decomposition and oxidation occurred on the surface of GaN when exposed to heat over a long time, or even at a low temperature, as compared to thermal decomposition of GaN in ambient nitrogen. The internal residual stress of GaN was relaxed most effectively when annealing at 900 °C for 3 h, and it was confirmed that the crystal quality is best under this condition. We also confirmed that the effect of annealing was extremely beneficial because native oxide impurities were removed most effectively in this condition. However, Ga metal or oxide could formed due to the occurrence of slight thermal decomposition on the surface. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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