Influence of Copper on the Switching Properties of Hafnium Oxide-Based Resistive Memory.

Autor:	Briggs, B. D., Bishop, S. M., Leedy, K. D., Butcher, B., Moore, R. L., Novak, S. W., Cady, N. C.
Zdroj:	MRS Online Proceedings Library; 2011, Vol. 1337 Issue 1, p1-6, 6p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink