| Autor: |
Ichinose, Daichi, Shimizu, Takao, Sakata, Osami, Yamada, Tomoaki, Ehara, Yoshitaka, Funakubo, Hiroshi |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 1/14/2021, Vol. 129 Issue 2, p1-6, 6p |
| Abstrakt: |
A 30-nm-thick epitaxial tetragonal (100)/(001) Pb(Zr0.22Ti0.78)O3 (PZT) thin film was grown at 600 °C on (001) KTaO3 (KTO) single-crystal substrate by metalorganic chemical vapor deposition. The a/c domain structure in the PZT film was analyzed in detail at room temperature by synchrotron x-ray diffraction (XRD) and piezoresponse force microscopy techniques. The temperature dependence of the crystal structure was investigated by XRD reciprocal space mapping and in-plane grazing incidence XRD. The PZT films were grown on KTO substrates under compressive strains from 700 °C to room temperature. This compressive strain gave rise to a perfect (001) orientation below a Curie temperature (TC) of ∼520 °C. An in-plane a-axis lattice parameter for the c domain kept the same value as that of the substrate lattice up to 350 °C despite the ferroelectric transition. Nucleation of the a domain started at around 350 °C. The formation of the a domain released the strain for the in-plane a-axis lattice parameter, as confirmed by in-plane analysis of the crystal structure. The results revealed that the in-plane average surface area of the PZT unit cell continued to match that of the KTaO3 substrate from 700 °C to room temperature, regardless of the domain structure evolution. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
