Boron Enhanced H Diffusion in Amorphous Si Formed by Ion Implantation.

Autor: Johnson, Brett C., Atanacio, Armand J., Prince, Kathryn E., McCallum, Jeffrey C.
Zdroj: MRS Online Proceedings Library; 2008, Vol. 1070 Issue 1, p1-6, 6p
Databáze: Complementary Index