Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 °C.

Autor: Neudeck, Philip G., Spry, David J., Chen, Liang-Yu, Chang, Carl W., Beheim, Glenn M., Okojie, Robert S., Evans, Laura J., Meredith, Roger D., Ferrier, Terry L., Krasowski, Michael J., Prokop, Norman F.
Zdroj: MRS Online Proceedings Library; 2008, Vol. 1069 Issue 1, p1-6, 6p
Databáze: Complementary Index
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