Comparison of Mocvd Precursors for Hf1-xSixO2 Gate Dielectric Deposition.
| Autor: | Hendrix, B. C., Borovik, A. S., Wang, Z., Xu, C., Roeder, J. F., Baum, T. H., Bevan, M. J., Visokay, M. R., Chambers, J. J., Rotondaro, A. L. P., Bu, H., Colombo, L. |
|---|---|
| Zdroj: | MRS Online Proceedings Library; 2002, Vol. 716 Issue 1, p1-6, 6p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink