Ultrathin Si3N4 Films Deposited From Dichlorosilane For Gate Dielectrics Using Single-Wafer Hot-Wall Rapid Thermal CVD.

Autor:	Senzaki, Yoshihide, Brichko, Yakov, Barelli, Carl, Herring, Robert, Teasdale, Dana, Schaefer, Marci, Sisson, Joseph
Zdroj:	MRS Online Proceedings Library; 2002, Vol. 716 Issue 1, p1-4, 4p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink