Analysis of Transferred MoS2 Layers Grown by MOCVD: Evidence of Mo Vacancy Related Defect Formation.
| Autor: | Schoenaers, B., Leonhardt, A., Mehta, A. N., Stesmans, A., Chiappe, D., Asselberghs, I., Radu, I., Huyghebaert, C., De Gendt, S., Houssa, M., Afanas'ev, V. V. |
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| Zdroj: | ECS Journal of Solid State Science & Technology; 2020, Vol. 9 Issue 9, p1-8, 8p |
| Databáze: | Complementary Index |
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