HTCVD growth of semi-insulating 4H-SiC crystals with low defect density.

Autor:	Ellison, A., Magnusson, B., Hemmingsson, C., Magnusson, W., Iakimov, T., Storasta, L., Henry, A., Henelius, N., Janzén, E.
Zdroj:	MRS Online Proceedings Library; 2000, Vol. 640 Issue 1, p1-11, 11p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink