Various Methods to Reduce Defect States in Tantalum Oxide Capacitors for DRAM Applications.

Autor: Lau, W. S., Zhang, G., Leong, L. L., Qian, P. W., Han, Taejoon, Das, J., Sandler, Nathan P., Chu, P. K.
Zdroj: MRS Online Proceedings Library; 2005, Vol. 864 Issue 1, p1-7, 7p
Databáze: Complementary Index