Various Methods to Reduce Defect States in Tantalum Oxide Capacitors for DRAM Applications.
Autor: | Lau, W. S., Zhang, G., Leong, L. L., Qian, P. W., Han, Taejoon, Das, J., Sandler, Nathan P., Chu, P. K. |
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Zdroj: | MRS Online Proceedings Library; 2005, Vol. 864 Issue 1, p1-7, 7p |
Databáze: | Complementary Index |
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