Carrier-Density Fluctuation Noise and the Interface Trap Density in GaN/AlGaN HFETs.

Autor:	Kotchetkov, Dmitri, Balandin, Alexander A.
Zdroj:	MRS Online Proceedings Library; 2001, Vol. 680 Issue 1, p1-6, 6p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink