High Permittivity Oxide Gate Stacks on Silicon Incorporating UHV Silicon Nitride Interfacial Layers.
| Autor: | Shriver, Mark A., Gabrys, Ann M., Higman, T. K., Campbell, S. A. |
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| Zdroj: | MRS Online Proceedings Library; 2001, Vol. 670 Issue 1, p1-5, 5p |
| Databáze: | Complementary Index |
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