| Autor: |
Galiulina, J. S., Mamonov, A. P., Koubisy, M. S. I., Shtang, T. V., Biryukov, D. Yu., Gavrilov, N. V., Zatsepin, A. F., Volkovich, Vladimir A., Kashin, Ilya V., Smirnov, Andrey A., Narkhov, Evgeniy D. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2020, Vol. 2316 Issue 1, p1-4, 4p |
| Abstrakt: |
Optically transparent SiO2 glass was implanted in a pulsed mode with 30 keV Bi-ions with different doses: 1016, 5·1016, 1017, 3·1017 pcs/cm2. The depth of penetration of ions into the studied SiO2 samples was estimated using the SRIM software package and is in the depth range of 10-60 nm. Optical absorption spectra were recorded on a vacuum spectrophotometer McPherson VuVAS 1000 Pl. It has a non-elementary form, which indicates the presence of active centers and structural defects associated with intrinsic defects of silicon dioxide glass, as well as with bismuth ions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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