MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N2O Oxidation.
| Autor: | Kimoto, T., Kanzaki, Y., Noborio, M., Kawano, H., Matsunami, H. |
|---|---|
| Zdroj: | MRS Online Proceedings Library; 2004, Vol. 815 Issue 1, p264-269, 6p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink