Combined Application of Section and Projection Topography to Defect Analysis in PVT-Grown 4H-SiC.

Autor: Wang, H., Wu, F., Byrappa, S., Shun, S., Raghothamachar, B., Dudley, M., Sanchez, E. K., Chung, G., Hansen, D., Mueller, S. G., Loboda, M. J.
Zdroj: MRS Online Proceedings Library; 2012, Vol. 1433 Issue 1, p77-82, 6p
Databáze: Complementary Index