Synchrotron Topography Studies of Growth and Deformation-Induced Dislocations in 4H-SiC.

Autor:	Dudley, M., Wang, H., Wu, F., Byrappa, S., Shun, S., Raghothamachar, B., Sanchez, E. K., Chung, G., Hansen, D., Mueller, S. G., Loboda, M. J.
Zdroj:	MRS Online Proceedings Library; 2012, Vol. 1433 Issue 1, p65-76, 12p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink