Forming-free Resistance Random Access Memory Using Ta2O5/TaOx Bi-layer Prepared by Magnetron Sputtering Method.
| Autor: | Fukuda, Natsuki, Fukuju, Kazunori, Yogosawa, Isamu, Horita, Kazumasa, Kikuchi, Shin, Nishioka, Yutaka, Suu, Koukou |
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| Zdroj: | MRS Online Proceedings Library; 2012, Vol. 1430 Issue 1, p100-105, 6p |
| Databáze: | Complementary Index |
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