Nucleation of GaN on (0001) sapphire during MOCVD growth: an atomic force and high resolution electron microscopy study.
Autor: | Degave, F., Ruterana, P., Nouet, G., Je, J. H., Kim, C. C. |
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Zdroj: | MRS Online Proceedings Library; 2000, Vol. 639 Issue 1, p1-6, 6p |
Databáze: | Complementary Index |
Externí odkaz: |