Nucleation of GaN on (0001) sapphire during MOCVD growth: an atomic force and high resolution electron microscopy study.

Autor: Degave, F., Ruterana, P., Nouet, G., Je, J. H., Kim, C. C.
Zdroj: MRS Online Proceedings Library; 2000, Vol. 639 Issue 1, p1-6, 6p
Databáze: Complementary Index