Inductively Coupled High-Density Plasma-Induced Etch Damage of GaN MESFETs.

Autor: Shul, R. J., Zhang, L., Baca, A. G., Willison, C. G., Han, J., Pearton, S. J., Lee, K. P., Ren, F.
Zdroj: MRS Online Proceedings Library; 2000, Vol. 622 Issue 1, p1-7, 7p
Databáze: Complementary Index