Polarization induced 2DEG in MBE grown AlGaN/GaN HFETs: On the origin, DC and RF characterization.
| Autor: | Vetury, R., Smorchkova, I. P., Elsass, C. R., Heying, B., Keller, S., Mishra, U. K. |
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| Zdroj: | MRS Online Proceedings Library; 2000, Vol. 622 Issue 1, p1-6, 6p |
| Databáze: | Complementary Index |
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