Phosphorus / Silicon Interstitial Annealing After Ion Implantation.

Autor: Keys, P. H., Brindos, R., Krishnamoorthy, V., Puga-Lambers, M., Jones, K. S., Law, M. E.
Zdroj: MRS Online Proceedings Library; 2000, Vol. 610 Issue 1, p1-6, 6p
Databáze: Complementary Index
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