The Effect of Impurities on Diffusion and Activation of ion Implanted Boron in Silicon.

Autor:	Robertson, L. S., Brindos, R., Jones, K. S., Law, M. E., Downey, D. F., Falk, S., Liu, J.
Zdroj:	MRS Online Proceedings Library; 2000, Vol. 610 Issue 1, p1-6, 6p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink