Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation.

Autor: Robertson, L. S., Warnes, P. N., Jones, K. S., Earles, S. K., Law, M. E., Downey, D. F., Falk, S., Liu, J.
Zdroj: MRS Online Proceedings Library; 2000, Vol. 610 Issue 1, p1-6, 6p
Databáze: Complementary Index