Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation.
Autor: | Robertson, L. S., Warnes, P. N., Jones, K. S., Earles, S. K., Law, M. E., Downey, D. F., Falk, S., Liu, J. |
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Zdroj: | MRS Online Proceedings Library; 2000, Vol. 610 Issue 1, p1-6, 6p |
Databáze: | Complementary Index |
Externí odkaz: |