| Autor: |
Khrapovitskaya, Yu. V., Chernykh, M. Y., Ezubchenko, I. S., Grishchenko, Yu. V., Mayboroda, I. O., Chernykh, I. A., Andreev, A. A., Perminov, P. A., Tsotsorin, A. N., Chernykh, M. I., Zanaveskin, M. L., Semeykin, I. V. |
| Zdroj: |
Nanotechnologies in Russia; 2020, Vol. 15 Issue 2, p169-174, 6p |
| Abstrakt: |
Gallium nitride heterostructures on silicon substrates were grown by the method of gas-phase epitaxy from organometallic compounds. Based on them, transistors with a total gate width of 7.92 mm were created. The influence of the architecture of buffer layers on the characteristics of heterostructures and test transistors based on them is studied. Powerful transistors were obtained with an output pulse power of 45 W at a frequency of 1 GHz with a supply voltage of 28 V. The maximum efficiency of the transistor was 55%. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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