| Autor: |
Blond, Jeremy, Aliane, Abdelkader, Meilhan, Jerome, Kaya, Hacile, Dussopt, Laurent |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Dec2020, Vol. 41 Issue 12, p1746-1749, 4p |
| Abstrakt: |
The thermal sensitivity and Low Frequency Noise (LFN) of compensation doped Silicon-On-Insulator (SOI) resistors are studied experimentally, down to the cryogenic regime. A high compensation nominal ratio ${K}={N}_{A}/{N}_{D}$ of 0.82 is compared with uncompensated and partially compensated configurations, using Phosphorus and Boron as dopant species. The Temperature Coefficient of Resistance (TCR) reaches −2.7%/K at 80 K, for an effective compensation ratio close to 0.98 considering incomplete dopant ionization. The measurements reveal a low LFN with a nearly frequency-independent spectrum, far from the classical 1/f trend observed in uncompensated silicon. The mean value of the Hooge constant on the highly compensated silicon sample equals $3.15\times 10 ^{-4}$ at 300 K and $4.50\times 10^{-5}$ at 80 K. The normalized LFN at 80 K does not depend on the resistor length and thereby seems independent of the volume. Such high performance thermistors represent an attractive, mature and affordable solution for high performance thermal sensing. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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