Transient Enhanced Diffusion for Ultra Low Energy Boron, Phosphorus, and Arsenic Implantation in Silicon.

Autor: Yu, Ning, Jain, Amitabh, Mercer, Doug
Zdroj: MRS Online Proceedings Library; 1998, Vol. 532 Issue 1, p35-40, 6p
Databáze: Complementary Index
Externí odkaz: