| Autor: |
Li, C. B., Mao, R. W., Zuo, Y. H., Zhao, L., Shi, W. H., Luo, L. P., Cheng, B. W., Yu, J. Z., Wang, Q. M. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/4/2004, Vol. 85 Issue 14, p2697-2699, 3p, 2 Diagrams, 4 Graphs |
| Abstrakt: |
A 1.55 μm Ge islands resonant-cavity-enhanced (RCE) detector with high-reflectivity bottom mirror was fabricated by a simple method. The bottom mirror was deposited in the hole formed by anisotropically etching in a basic solution from the back side of the sample with the buried SiO2 layer in silicon-on-insulator substrate as the etch-stop layer. Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2–1.65 μm. The peak responsivity of the RCE detector at 1543.8 nm is 0.028 mA/W and a full width at half maximum of 5 nm is obtained. Compared with the conventional p-i-n photodetector, the responsivity of RCE detector has a nearly threefold enhancement. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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