Advances in GaAs Mosfet's Using Ga2O3(Gd2O3) as Gate Oxide.
| Autor: | Wang, Y. C., Hong, M., Kuo, J. M., Mannaerts, J. P., Kwo, J., Tsai, H. S., Krajewski, J. J., Weiner, J. S., Chen, Y. K., Cho, A. Y. |
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| Zdroj: | MRS Online Proceedings Library; 1999, Vol. 573 Issue 1, p219-225, 7p |
| Databáze: | Complementary Index |
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