| Autor: |
Kontrosh, Evgeny V., Lebedev, Vladimir V., Kalinovsky, Vitaliy S., Klimko, Grigory V., Andreev, Viacheslav M., Wiesenfarth, Maike, Steiner, Myles, Schmieder, Kenneth |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2020, Vol. 2298 Issue 1, p1-6, 6p |
| Abstrakt: |
High-efficiency multijunction photoelectric converters of high-power optical emission, based on III-V materials, are presently the most promising for application in concentrator photovoltaics and radio-photonics. With increasing power of the optical emission to be converted, the influence exerted by connecting tunnel diodes on the efficiency of multijunction photoelectric converters becomes more pronounced. To provide the maximum efficiency of multijunction photoelectric converters, the connecting tunnel diodes must have a high density of the peak tunneling current, low differential resistance, and maximum optical transparency to minimize the optical loss. Efforts were made in the study to develop high-efficiency connecting p++–i–n++ tunnel diodes on the basis of GaAs/AlGaAs structures grown by molecular-beam epitaxy, with peak tunneling current of up to 200 A/cm2. These types of tunnel diodes are to be used as connecting elements in multijunction concentrator solar cells and high-power multijunction photoelectric converters based on III-V materials. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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