Crystal Structure and Band Gap of Nanoscale Phases of Si Formed at Various Depths of the Near-Surface Region of SiO2.

Autor:	Tashmukhamedova, D. A., Yusupjanova, M. B., Allayarova, G. Kh., Umirzakov, B. E.
Předmět:	BAND gaps CRYSTAL structure ION energy ION bombardment SILICON oxide
Zdroj:	Technical Physics Letters; Oct2020, Vol. 46 Issue 10, p972-975, 4p
Abstrakt:	Si nanophases and nanolayers were obtained by bombardment with Ar+ ions followed by annealing at various depths of silicon oxide. As ion energy E0 varies from 10 to 25 keV, the average depth of Si nanophase formation varies from 15 to 25 nm. It is shown that, as the sizes of Si nanophases vary from ~10 to 25 nm, band gap Eg decreases from 1.9 to 1.5 eV. For Si nanolayers, Eg is ~1.1–1.2 eV. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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