| Autor: |
Nair, Akhil K., Kumari, Puja, Ray, Soumya Jyoti, Sharma, Veerendra K., Prajapat, C. L., Yusuf, S. M. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2020, Vol. 2265 Issue 1, p1-4, 4p |
| Abstrakt: |
First-principle based DFT calculations were employed to study the electronic and magnetic properties of phosphorene doped with manganese (Mn) atoms at specific substitutional sites. As a result, magnetic ordering was achieved in the layer with high temperature sustainability upto ∼ 750 K. The magnetic ground state of the phosphorene system was computed for the TM (transitional metal) doping with varying concentrations and the corresponding critical temperature was estimated using the mean-field theory. The examinations performed above suggest that phosphorene indeed is an amazing 2D (2 dimensional) material to become a contender for future spintronic applications and diluted magnetic semiconductors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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