| Autor: |
Monish, M., Mohan, Shyam, Sutar, D. S., Major, S. S., Sharma, Veerendra K., Prajapat, C. L., Yusuf, S. M. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2020, Vol. 2265 Issue 1, p1-4, 4p |
| Abstrakt: |
Single phase, epitaxial GaN films have been grown at 700 oC on c-sapphire by rf magnetron sputtering using a GaAs target, with 100 % and 10 % N2 in Ar-N2 atmosphere. High resolution XRD measurements reveal significant differences in the strain present in the two films. Electrical measurements show low resistivity ∼2 x 10−3 Ω-cm for the film grown with 10 % N2, compared to the high resistivity (≳ 105 Ω-cm) of the film grown with 100 % N2 in sputtering atmosphere. Optical studies reveal significant difference in band gap of the two films and free carrier features in NIR due to the high electron concentration of 1.2 x 1020 cm-3 in the film grown with 10 % N2. XPS studies reveal the absence of As but presence of similar levels of oxygen impurity in the two films. The film grown with 10 % N2 shows much smaller N/Ga ratio and the presence of uncoordinated Ga, indicating that nitrogen vacancies are likely to be responsible for its high conductivity. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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