| Autor: |
Mandal, Snehal, Das, I., Sharma, Veerendra K., Prajapat, C. L., Yusuf, S. M. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2020, Vol. 2265 Issue 1, p1-4, 4p |
| Abstrakt: |
We have prepared ultrathin films of CoFeB of thickness (∼3nm) by RF magnetron sputtering, on p-type Si substrate having few nm of native oxide layer. We have investigated the magneto-transport properties of the film in the current-in plane (CIP) geometry in the presence and absence of magnetic field. The magnetoresistance (MR=[R (H)-R (0)]/R (0) * 100%) was measured at five different bias current (ranging from 1 µA to 5 mA) in longitudinal (I parallel H) and transverse (I perpendicular H) configurations with H varying from 0 kOe to 90 kOe at room temperature (300 K). Anisotropy in the MR was also observed with 3% MR in longitudinal configuration and 6% MR in transverse configuration. At high bias current (5 mA), MR was found to be negative in both cases. The bias dependence is expected to be due to magnetic field control of impact ionization of carriers near the FM/SC interface. Also the anisotropy in MR seems to be different from the conventional anisotropic magnetoresistance (AMR). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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