| Autor: |
Thorat, Ashish B., Taware, M. S., Bharud, V. D., Dhole, S. D., Dahiwale, S. S., Sharma, Veerendra K., Prajapat, C. L., Yusuf, S. M. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2020, Vol. 2265 Issue 1, p1-4, 4p |
| Abstrakt: |
In the present work, reduction of Graphene Oxide (GO) was done by irradiating Graphene Oxide (GO) thin film with 40 keV Ar+ ions by varying the ion fluence from 3.97×1016 ion/cm2 to 11.93×1016 ion/cm2. Structural and physiochemical properties of the pristine and irradiated samples were investigated with the help of X-ray powder diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and Raman Spectroscopy. X-ray diffraction pattern shows that peak intensity of GO decreases with the increase in ion fluence. The Raman spectra of GO indicates ID/IG ratio is decreasing with increase in the ion irradiation fluence. When low energy Ar+ ion interacts with the GO films, it may happen that C-O, C-OH bond breaks, as a result of which C-C and C=C bonds are formed. FTIR results show that there is a decrease in intensities of C-O, C-OH, C=O absorption bands and Raman analysis confirms the r-GO formation. The experimental results suggest that low-energy ion irradiation with varying ion fluence could realize formation of GO to reduced grapheme oxide (r-GO). Low energy ion beam irradiation, provides a promising approach for processing GO to r- GO a convenient, ion fluence controllable and importantly a chemical free method. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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