| Autor: |
Dragoman, M, Dinescu, A, Dragoman, D, Palade, C, Moldovan, A, Dinescu, M, Teodorescu, V S, Ciurea, M L |
| Předmět: |
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| Zdroj: |
Nanotechnology; 12/4/2020, Vol. 31 Issue 49, p1-10, 10p |
| Abstrakt: |
In this paper we report a set of experiments at the wafer level regarding field-effect transistors with a graphene monolayer channel transferred on the ferroelectric HfO2/Ge–HfO2/HfO2 three-layer structure. This kind of transistor has a switching ratio of 103 between on and off states due to the bandgap in graphene induced by the ferroelectric structure. Both top and back gates effectively control the carriers' charge flow in graphene. The transistor acts as a three-terminal memristor, termed a memtransistor, with applications in neuromorphic computation. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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