| Autor: |
Sønsteby, Henrik H., Skaar, Erik, Bratvold, Jon E., Freeland, John W., Yanguas-Gil, Angel, Elam, Jeffrey W., Nilsen, Ola, Fjellvåg, Helmer |
| Zdroj: |
Journal of Materials Chemistry C; 9/28/2020, Vol. 8 Issue 36, p12662-12668, 7p |
| Abstrakt: |
Resistors are essential parts of futuristic all-oxide electronic architectures, yet easily overlooked due to their apparent simplicity. Herein, design of thin films with specific resistance spanning six orders of magnitude by partial substitution of Cu2+ for Ni3+ in the metallic conductor LaNiO3 is shown. Substitution is attainable across the whole composition range using atomic layer deposition on LaAlO3(100)pc substrates, however with some inclusion of Ruddlesden–Popper RP1 phase (La2CuO4) at high levels of Cu-incorporation. The thermal stability of the resistance is based on a metal–insulator transition that evolves from non-existent for LaNiO3 to above room-temperature for high Cu2+ substitution. This provides further insight in the metal–insulator transition found for correlated rare-earth nickelates, especially the type of transition seen for ultrathin films of LaNiO3 that is usually attributed to oxygen vacancy formation. Materials with variable resistivity and metal–insulator-transition temperatures are key in the design of futuristic electronics such as metal–insulator-transition-driven neuromorphic devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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